AIDA - PUB - 2012 - 021 AIDA Advanced European Infrastructures for Detectors at Accelerators
نویسندگان
چکیده
The performance of planar silicon pixel sensors, in development for the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades, has been examined in a series of beam tests at the CERN SPS facilities since 2009. Salient results are reported on the key parameters, including the spatial resolution, the charge collection and the charge sharing between adjacent cells, for different bulk materials and sensor geometries. 1Corresponding author. c © 2012 IOP Publishing Ltd and Sissa Medialab srl doi:10.1088/1748-0221/7/10/P10028 2 0 1 2 J I N S T 7 P 1 0 0 2 8 Measurements are presented for n+-in-n pixel sensors irradiated with a range of fluences and for p-type silicon sensors with various layouts from different vendors. All tested sensors were connected via bump-bonding to the ATLAS Pixel read-out chip. The tests reveal that both n-type and p-type planar sensors are able to collect significant charge even after the lifetime fluence expected at the HL-LHC.
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